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czochralski process

n. (context chemistry English) A method of crystal growth used to obtain single crystals of semiconductors, metals, salts, and synthetic gemstones.

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Czochralski process

The Czochralski process is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones. The process is named after Polish scientist Jan Czochralski, who invented the method in 1916 while investigating the crystallization rates of metals. He made this discovery by accident, while studying the crystallization rate of metals when, instead of dipping his pen into the ink, he did so in molten tin and drew a tin filament, that later proved to be a single crystal.

The most important application may be the growth of large cylindrical ingots, or boules, of single crystal silicon used in the electronics industry to make semiconductor devices like integrated circuits. Other semiconductors, such as gallium arsenide, can also be grown by this method, although lower defect densities in this case can be obtained using variants of the Bridgman-Stockbarger technique.