n. a technique, used in the production of thin films of ultra-pure semiconductors, that grows the film by condensation of evaporated atoms
Molecular beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho. MBE is widely used in the manufacture of semiconductor devices, including transistors for cellular phones and WiFi.
Usage examples of "molecular beam epitaxy".
To achieve this acceleration, the LPS contains a state-of-the-art molecular beam epitaxy (MBE) facility to develop miniature lasers, optical amplifiers, and other components made out of gallium arsenide.